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APM32F103CBT6-R датащи(PDF) 32 Page - Geehy Semiconductor Co., Ltd. |
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APM32F103CBT6-R датащи(HTML) 32 Page - Geehy Semiconductor Co., Ltd. |
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32 / 78 page ![]() w w w. g e e h y. c o m P a g e 31 5.3.5 Static latch-up (LU) When running a simple application (controlling the flashing of two LED through the I/O port), the test sample is subject to false electromagnetic interference until an error is generated, and the LED flashing indicates the generation of error. In order to evaluate the latch performance, two complementary static latch tests need to be conducted on 6 samples: Provide power supply voltage exceeding the limit for each power supply pin. Inject current on each input, output and configurable I/O pin. This test conforms to EIA/JESD78E integrated circuit latch standard. Table16Static Latch-up Symbol Parameter Condition Type LU Class of static latch-up TA=105℃, conforming to EIA/JESD78E Class II A Note: The samples are measured by a third-party testing organization and are not tested in production. 5.4 Memory 5.4.1 Flash characteristics Table17 Flash Memory Characteristics Symbol Parameter Condition Minimum value Typical value Maximum value Unit tprog 16-bit programming time TA = -40~105℃ VDD=2.4~3.6V 32.2 33.2 35.2 μs tERASE Page (1K bytes) erase time TA = -40~105℃ VDD=2.4~3.6V 1.34 1.38 1.50 ms tME Mass erase time TA = 25℃ VDD=3.3V - - 6.5 ms Vprog Programming voltage TA = -40~105℃ 2.0 3.3 3.6 V Note: The data are obtained from a comprehensive evaluation and are not tested in production. Table18 FLASH Memory Life and Data Retention Period Symbol Parameter Condition Minimum value Typical value Maximum value Unit NEND Erasure cycles TA =-40~85℃ 100 - - 1,000 cycles tRET Data retention period TA = 55 ℃ 20 - - Year Note: The data are obtained from a comprehensive evaluation and are not tested in production. |
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