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MF1ICS7001 датащи(PDF) 3 Page - NXP Semiconductors |
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MF1ICS7001 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page ![]() 101731 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 3.1 — 18 April 2007 3 of 7 NXP Semiconductors MF1 IC S70 01 Standard 4Kbyte card IC 4. Limiting values [1] Stresses above one or more of the limiting values may cause permanent damage to the device [2] These are stress ratings only. Operation of the device at these or any other conditions above those given in the Characteristics section of the specification is not implied [3] Exposure to limiting values for extended periods may affect device reliability [4] MIL Standard 883-C method 3015; Human body model: C = 100 pF, R = 1.5 kW 5. Characteristics [1] Stresses above one or more of the limiting values may cause permanent damage to the device [2] These are stress ratings only. Operation of the device at these or any other conditions above those given in the Characteristics section of the specification is not implied [3] Exposure to limiting values for extended periods may affect device reliability Table 2. Limiting values[1][2][3] In accordance with the Absolute Maximum Rating System (IEC 134) Symbol Parameter Min Max Unit IIN Input Current - 30 mA Ptot Total power dissipation per package - 200 mW Tstg Storage temperature range -55 +125 °C Tamb Operating temperature -25 70 °C VESD electrostatic discharge voltage LA-LB [4] 2kV ILU Latch-up current ± 100 mA Table 3. Electrical characteristics [1][2][3] Symbol Parameter Conditions Min Typ Max Unit fIN input frequency - 13.56 - MHz CIN Input capacitance (LCR meter HP4258) 22 °C, Cp-D, 13.56 MHz, 2 V 14.4 16.1 17.4 pF tW EEPROM write time - 2.9 - ms tRET EEPROM data retention 10 years NWE EEPROM write endurance 105 cycles |
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