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TS3USB221EDRCR.B датащи(PDF) 5 Page - Texas Instruments |
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TS3USB221EDRCR.B датащи(HTML) 5 Page - Texas Instruments |
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5 / 29 page ![]() 5.4 Thermal Information THERMAL METRIC(1) TS3USB221E UNIT DRC (VSON) RSE (UQFN) 10 PINS 10 PINS RθJA Junction-to-ambient thermal resistance 57.7 204.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 87.7 118.1 RθJB Junction-to-board thermal resistance 32.6 121.5 ψJT Junction-to-top characterization parameter 8.2 13.9 ψJB Junction-to-board characterization parameter 32.8 121.2 RθJC(bot) Junction-to-case (bottom) thermal resistance 18.5 N/A (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application note. 5.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted)(1) PARAMETER TEST CONDITIONS MIN TYP(2) MAX UNIT VIK VCC = 3.6 V, 2.7 V, II = –18 mA –1.8 V IIN Control inputs VCC = 3.6 V, 2.7 V, 0 V, VIN = 0 V to 3.6 V ±1 μA IOZ (3) VCC = 3.6 V, 2.7 V, VO = 0 V to 5.25 V, VI = 0 V, VIN = VCC or GND, Switch OFF ±1 μA IOFF VCC = 0 V VI/O = 0 V to 5.25 V ±2 μA VI/O = 0 V to 3.6 V ±2 VI/O = 0 V to 2.7 V ±1 ICC VCC = 3.6 V, 2.7 V, VIN = VCC or GND, II/O = 0 V, Switch ON or OFF 30 μA ICC (low power mode) VCC = 3.6 V, 2.7 V, VIN = VCC or GND Switch disabled ( OE in high state) 1 μA ICC (4) Control inputs One input at 1.8 V, Other inputs at VCC or GND VCC = 3.6 V 20 μA VCC = 2.7 V 0.5 Cin Control inputs VCC = 3.3 V, 2.5 V, VIN = 3.3 V or 0 V 1.5 2.5 pF Cio(OFF) VCC = 3.3 V, 2.5 V, VI/O = 3.3 V or 0 V, Switch OFF 3.5 5 pF Cio(ON) VCC = 3.3 V, 2.5 V, VI/O = 3.3 V or 0 V, Switch ON 6 7.5 pF rON (5) VCC = 3 V, 2.3 V VI = 0 V, IO = 30 mA 3 6 Ω VI = 2.4 V, IO = –15 mA 3.4 6 ΔrON VCC = 3 V, 2.3 V VI = 0 V, IO = 30 mA 0.2 Ω VI = 1.7, IO = –15 mA 0.2 rON(flat) VCC = 3 V, 2.3 V VI = 0 V, IO = 30 mA 1 Ω VI = 1.7, IO = –15 mA 1 (1) VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins. (2) All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C. (3) For I/O ports, the parameter IOZ includes the input leakage current. (4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND. (5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals. www.ti.com TS3USB221E SCDS263E – SEPTEMBER 2009 – REVISED JULY 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 5 Product Folder Links: TS3USB221E |
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