8 Device and Documentation Support

8.1 Documentation Support

8.1.1 Related Documentation

For related documentation, see the following:

• Texas Instruments, Implications of Slow or Floating CMOS Inputs application note

• Texas Instruments, High Speed Layout Guidelines

• Teas Instruments, USB 2.0 Board Design and Layout Guidelines

8.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

8.3 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

8.4 Trademarks

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

8.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

8.6 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

9 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision D (September 2019) to Revision E (July 2024)

Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

• Changed ESD HBM performance testing standard from: JESD 22 to: JEDEC JS-001..................................... 4

• Changed ESD CDM performance testing standard from: JESD22-C101 to: JEDEC JS-002............................ 4

• Added tablenote to the Data input/output voltage parameter............................................................................. 4

• Changed RSE (UQFN) junction-to-ambient thermal resistance value from: 169.8°C/W to: 204.8°C/W............ 5

• Changed RSE (UQFN) junction-to-case (top) thermal resistance value from: 84.7°C/W to: 118.1°C/W........... 5

• Changed RSE (UQFN) junction-to-board thermal resistance value from: 94.9°C/W to: 121.5°C/W.................. 5

• Changed RSE (UQFN) junction-to-top characterization parameter value from: 5.7°C/W to: 13.9°C/W.............5

• Changed RSE (UQFN) junction-to-board characterization parameter value from: 94.9°C/W to: 121.2°C/W.....5

• Changed the VIK value in the Electrical Characteristics table from: –1.8V maximum to: –1.8V minimum......... 5

• Changed the graphs in the Typical Characteristics section................................................................................7

TS3USB221E

SCDS263E – SEPTEMBER 2009 – REVISED JULY 2024

www.ti.com

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