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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SLAS616 датащи(PDF) 11 Page - Texas Instruments |
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SLAS616 датащи(HTML) 11 Page - Texas Instruments |
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11 / 52 page  MSP430FE42x2 MIXED SIGNAL MICROCONTROLLER SLAS616 − JULY 2008 11 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 memory organization MSP430FE4232 MSP430FE4242 MSP430FE4252 MSP430FE4272 Memory Interrupt vector Code memory Size Flash Flash 8KB 0FFFFh to 0FFE0h 0FFFFh to 0E000h 12KB 0FFFFh to 0FFE0h 0FFFFh to 0D000h 16KB 0FFFFh to 0FFE0h 0FFFFh to 0C000h 32KB 0FFFFh to 0FFE0h 0FFFFh to 08000h Information memory Size 256 Byte 010FFh to 01000h 256 Byte 010FFh to 01000h 256 Byte 010FFh to 01000h 256 Byte 010FFh to 01000h Boot memory Size 1kB 0FFFh to 0C00h 1kB 0FFFh to 0C00h 1kB 0FFFh to 0C00h 1kB 0FFFh to 0C00h RAM Size 256 Byte 02FFh to 0200h 512 Byte 03FFh to 0200h 512 Byte 03FFh to 0200h 1KB 05FFh − 0200h Peripherals 16 bit 8 bit 8-bit SFR 01FFh to 0100h 0FFh to 010h 0Fh to 00h 01FFh to 0100h 0FFh to 010h 0Fh to 00h 01FFh to 0100h 0FFh to 010h 0Fh to 00h 01FFh to 0100h 0FFh to 010h 0Fh to 00h bootstrap loader (BSL) The MSP430 bootstrap loader (BSL) enables users to program the flash memory or RAM using a UART serial interface. Access to the MSP430 memory via the BSL is protected by user-defined password. For complete description of the features of the BSL and its implementation, see the application report Features of the MSP430 Bootstrap Loader, literature number SLAA089. BSL Function PM Package Pins Data Transmit 53 - P1.0 Data Receive 52 - P1.1 flash memory The flash memory can be programmed via the JTAG port, the bootstrap loader, or in system by the CPU. The CPU can perform single-byte and single-word writes to the flash memory. Features of the flash memory include: D Flash memory has n segments of main memory and two segments of information memory (A and B) of 128 bytes each. Each segment in main memory is 512 bytes in size. D Segments 0 to n may be erased in one step, or each segment may be individually erased. D Segments A and B can be erased individually, or as a group with segments 0 to n. Segments A and B are also called information memory. D New devices may have some bytes programmed in the information memory (needed for test during manufacturing). The user should perform an erase of the information memory prior to the first use. |
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