STA326 datasheet(14/64 Pages) STMICROELECTRONICS

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Electrical specifications

STA326

14/64

DocID11531 Rev 9

3.2

DC electrical specifications (3.3 V buffers)

Operating conditions VDD33 = 3.3 V ±0.3 V, Tamb = 25° C unless otherwise specified

3.3

Power electrical specifications

Operating conditions VDD33 = 3.3 V ±0.3 V, VL = 3.3 V, = 30 V, Tamb = 25° C unless

otherwise specified.

Table 7. DC electrical specifications

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VIL

Low level input voltage

0.8

VIH

High level input voltage

2.0

Vhyst

Schmitt trigger hysteresis

0.4

Vol

Low level output

IoI = 2 mA

0.15

Voh

High level output

Ioh = -2 mA

VDD33

- 0.15

--V

Table 8. Power electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

RdsON

Power Pchannel/Nchannel

MOSFET RdsON

Id = 1A

200

270



Idss

Power Pchannel/Nchannel

leakage Idss

= 35 V

A

Power Pchannel RdsON

matching

Id = 1 A

Power Nchannel RdsON

matching

Id = 1 A

Dt_s

Low current dead time (static)

See test circuits,

Figure 6 and Figure 7

1020ns

td ON

Turn-on delay time

Resistive load

100

td OFF

Turn-off delay time

Resistive load

100

Rise time

Resistive load, Figure 6

and Figure 7

Fall time

Resistive load, Figure 6

and Figure 7

Supply voltage

Low logical state voltage VL

VL = 3.3 V

0.8

High logical state voltage VH

VL = 3.3 V

1.7

I-PWRDN

Supply current from in

PWRDN

Pin PWRDN = 0 V

I-hiz

Supply current from in

3-state

= 30 V, 3-state

Obsolete

Product(s)

- Obsolete

Product(s)

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