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STM32WB10CCU5 датащи(PDF) 96 Page - STMicroelectronics |
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STM32WB10CCU5 датащи(HTML) 96 Page - STMicroelectronics |
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96 / 110 page ![]() Electrical characteristics STM32WB10CC 96/110 DS13259 Rev 2 6.3.20 Temperature sensor characteristics 6.3.21 VBAT monitoring characteristics 6.3.22 Timer characteristics The parameters given in the following tables are Specified by design, not tested in production. Refer to Section 6.3.16 for details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output). Table 69. TS characteristics Symbol Parameter Min Typ Max Unit TL(1) VTS linearity with temperature - ±1 ±2 °C Avg_Slope(2) Average slope 2.3 2.5 2.7 mV / °C V30 Voltage at 30 °C (±5 °C)(3) 0.742 0.76 0.785 V tSTART (TS_BUF)(1) Sensor buffer start-up time in continuous mode(4) -8 15 µs tSTART(1) Start-up time when entering in continuous mode(4) -70 120 µs tS_temp(1) ADC sampling time when reading the temperature 5 - - µs IDD(TS)(1) Temperature sensor consumption from VDD, when selected by ADC -4.7 7 µA 1. Specified by design, not tested in production. 2. Evaluated by characterization, not tested in production. 3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 9: Temperature sensor calibration values. 4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes. Table 70. VBAT monitoring characteristics(1) 1. 1.55 V < VBAT < 3.6 V. Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -3 x 39 - kΩ QRatio on VBAT measurement - 3 - - Er(2) 2. Specified by design, not tested in production. Error on Q -10 - 10 % tS_vbat(2) ADC sampling time when reading the VBAT 12 - - µs Table 71. VBAT charging characteristics Symbol Parameter Conditions Min Typ Max Unit RBC Battery charging resistor VBRS = 0 - 5 - kΩ VBRS = 1 - 1.5 - |
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