CSD19533KCS, 100V N-Channel NexFET™ Power MOSFET

1 Features

• Ultra-low Qg and Qgd

• Low thermal resistance

• Avalanche rated

• Pb free terminal plating

• RoHS compliant

• Halogen free

• TO-220 plastic package

2 Applications

• Secondary side synchronous rectifier

• Motor control

3 Description

This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET

is designed to minimize losses in power conversion

applications.

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

Qg

Gate Charge Total (10V)

27

nC

Qgd

Gate Charge Gate-to-Drain

5.4

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 6V

9.7

mΩ

VGS = 10V

8.7

mΩ

VGS(th)

Threshold Voltage

2.8

V

Ordering Information(1)

Device

Package

Media

Qty

Ship

CSD19533KCS

TO-220 Plastic

Package

Tube

50

Tube

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

100

A

Continuous Drain Current (Silicon limited),

TC = 25°C

86

Continuous Drain Current (Silicon limited),

TC = 100°C

61

IDM

Pulsed Drain Current (1)

207

A

PD

Power Dissipation

188

W

TJ,

Tstg

Operating Junction and

Storage Temperature Range

–55 to 175

°C

EAS

Avalanche Energy, single pulse

ID = 46A, L = 0.1mH, RG = 25Ω

106

mJ

(1)

Max RθJC = 0.8°C/W, pulse duration ≤100μs, Duty cycle ≤1%

0

3

6

9

12

15

18

21

24

27

30

0

2

4

6

8

10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C, ID = 55A

TC = 125°C, ID = 55A

G001

RDS(on) vs VGS

0

1

2

3

4

5

6

7

8

9

10

0

3

6

9

12

15

18

21

24

27

30

Qg - Gate Charge (nC)

ID = 55A

VDS = 50V

G001

Gate Charge

CSD19533KCS

SLPS482C – DECEMBER 2013 – REVISED MAY 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.