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CSD19533KCS датащи(PDF) 5 Page - Texas Instruments

номер детали CSD19533KCS
подробное описание детали  CSD19533KCS, 100V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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CSD19533KCS датащи(HTML) 5 Page - Texas Instruments

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1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
−75 −50 −25
0
25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
ID = 250uA
G001
Figure 4-6. Threshold Voltage vs Temperature
0
3
6
9
12
15
18
21
24
27
30
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C, ID = 55A
TC = 125°C, ID = 55A
G001
Figure 4-7. On-State Resistance vs Gate-to-Source
Voltage
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−75 −50 −25
0
25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID = 55A
G001
Figure 4-8. Normalized On-State Resistance vs
Temperature
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
Figure 4-9. Typical Diode Forward Voltage
0.1
1
10
100
1000
5000
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 0.8ºC/W
G001
Figure 4-10. Maximum Safe Operating Area
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
Figure 4-11. Single Pulse Unclamped Inductive
Switching
www.ti.com
CSD19533KCS
SLPS482C – DECEMBER 2013 – REVISED MAY 2024
Copyright © 2024 Texas Instruments Incorporated
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Product Folder Links: CSD19533KCS



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