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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD19533KCS датащи(PDF) 3 Page - Texas Instruments |
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CSD19533KCS датащи(HTML) 3 Page - Texas Instruments |
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3 / 14 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 100 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 80V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 2.2 2.8 3.4 V RDS(on) Drain-to-Source On-Resistance VGS = 6V, ID = 55A 9.7 12.2 mΩ VGS = 10V, ID = 55A 8.7 10.5 mΩ gfs Transconductance VDS = 10V, ID = 55A 115 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 50V, ƒ = 1MHz 2050 2670 pF Coss Output Capacitance 395 514 pF Crss Reverse Transfer Capacitance 9.6 12.5 pF RG Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (10V) VDS = 50V, ID = 55A 27 35 nC Qgd Gate Charge Gate-to-Drain 5.4 nC Qgs Gate Charge Gate-to-Source 9 nC Qg(th) Gate Charge at Vth 3.9 nC Qoss Output Charge VDS = 50V, VGS = 0V 79 nC td(on) Turn On Delay Time VDS = 50V, VGS = 10V, IDS = 55A, RG = 0Ω 7 ns tr Rise Time 5 ns td(off) Turn Off Delay Time 12 ns tf Fall Time 2 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 55A, VGS = 0V 0.9 1.1 V Qrr Reverse Recovery Charge VDS= 50V, IF = 55A, di/dt = 300A/μs 211 nC trr Reverse Recovery Time 77 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 0.8 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD19533KCS SLPS482C – DECEMBER 2013 – REVISED MAY 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD19533KCS |
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