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CSD19533KCS датащи(PDF) 4 Page - Texas Instruments

номер детали CSD19533KCS
подробное описание детали  CSD19533KCS, 100V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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CSD19533KCS датащи(HTML) 4 Page - Texas Instruments

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4.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 4-1. Transient Thermal Impedance
0
20
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60
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100
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0
0.4
0.8
1.2
1.6
2
VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =8V
VGS =6V
G001
Figure 4-2. Saturation Characteristics
0
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60
80
100
120
0
1
2
3
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5
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8
VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
Figure 4-3. Transfer Characteristics
0
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9
10
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Qg - Gate Charge (nC)
ID = 55A
VDS = 50V
G001
Figure 4-4. Gate Charge
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100000
0
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
Figure 4-5. Capacitance
CSD19533KCS
SLPS482C – DECEMBER 2013 – REVISED MAY 2024
www.ti.com
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