4

LP5520

SNVS440B – MAY 2007 – REVISED MARCH 2016

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Copyright © 2007–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pins.

(3)

If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.

(4)

Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160°C (typical) and

disengages at TJ = 140°C (typical).

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2) (3)

MIN

MAX

UNIT

V (SW, FB, ROUT, GOUT, BOUT)

–0.3

22

V

VDDA, VDDD, VDDIO, VLDO

–0.3

6

V

Voltage on logic pins

–0.3 V to VDDIO

0.3 V with 6 V

maximum

V

Continuous power dissipation(4)

Internally limited

Junction temperature, TJ-MAX

125

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±200

(1)

All voltages are with respect to the potential at the GND pins.

(2)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =

125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the

part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

V (SW, FB, ROUT, GOUT, BOUT)

0

21

V

VDDA,DDD

2.9

5.5

V

VDDIO

1.65

VDDA

V

Recommended load current (ROUT, GOUT, BOUT) per driver

0

60

mA

Junction temperature, TJ

–30

125

°C

Ambient temperature, TA

(2)

–30

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1)

LP5520

UNIT

YZR (DSBGA)

25 PINS

RθJA

Junction-to-ambient thermal resistance

58.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

0.3

°C/W

RθJB

Junction-to-board thermal resistance

7.9

°C/W

ψJT

Junction-to-top characterization parameter

0.5

°C/W

ψJB

Junction-to-board characterization parameter

7.9

°C/W