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LP5520TL/NOPB датащи(PDF) 26 Page - Texas Instruments |
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LP5520TL/NOPB датащи(HTML) 26 Page - Texas Instruments |
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26 / 45 page ![]() 26 LP5520 SNVS440B – MAY 2007 – REVISED MARCH 2016 www.ti.com Product Folder Links: LP5520 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Table 11. EEPROM Memory Map (continued) ADDRESS BITS [7:4] BITS [3:0] DEFINITION 4a GC0[7:0] Coefficient PWM value for green –40...–25 4b GC1[7:0] –24...–9 4c GC2[7:0] –8...+7 4d GC3[7:0] 8...23 4e GC4[7:0] 24..39 4f GC5[7:0] 40...55 50 GC6[7:0] 56...71 51 GC7[7:0] 72...87 52 GC8[7:0] 88...103 53 GC9[7:0] From 104 54 BC0[7:0] Coefficient PWM value for blue –40...–25 55 BC1[7:0] –24...–9 56 BC2[7:0] –8...+7 57 BC3[7:0] 8...23 58 BC4[7:0] 24..39 59 BC5[7:0] 40...55 5a BC6[7:0] 56...71 5b BC7[7:0] 72...87 5c BC8[7:0] 88...103 5d BC9[7:0] From 104 5e SHF[7:0] Self-heating factor 5f RED_CUR Red LED current 60 GREEN_CUR Green LED current 61 BLUE_CUR Blue LED current 62 Not used ... 6f 70 LM20B[11:8] LM20K[11:8] Scaling values for LM20 sensor 71 BB9[11:8] BB8[11:8] Base PWM value for blue (high bits) 72 BB7[11:8] BB6[11:8] 73 BB5[11:8] BB4[11:8] 74 BB3[11:8] BB2[11:8] 75 BB1[11:8] BB0[11:8] 76 GB9[11:8] GB8[11:8] Base PWM value for green (high bits) 77 GB7[11:8] GB6[11:8] 78 GB5[11:8] GB4[11:8] 79 GB3[11:8] GB2[11:8] 7a GB1[11:8] GB0[11:8] 7b RB9[11:8] RB8[11:8] Base PWM value for red (high bits) 7c RB7[11:8] RB6[11:8] 7d RB5[11:8] RB4[11:8] 7e RB3[11:8] RB2[11:8] 7f RB1[11:8] RB0[11:8] The EEPROM data can be read, written, and erased through the serial interface. The boost converter is used to generate the write and erase voltage for the memory. All operations are done in page mode. The page address has to be written in the EEPROM_control register before access to the EEPROM. Incremental access can be used both in I2C and SPI modes to speed up access. During EEPROM access the <rgb_auto> control bit in rgb control register must be low. |
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