ISL70024SEHLSLASHPROTO datasheet(1/14 Pages) RENESAS

номер детали	ISL70024SEHL/PROTO

подробное описание детали	200V, 7.5A Enhancement Mode GaN Power Transistor

PDF	14 Pages

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производитель	RENESAS [Renesas Technology Corp]

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Datasheet

FN8976 Rev.6.03

Page 1

Mar 28, 2024

The ISL70024SEH and ISL73024SEH are 200V

N-channel enhancement mode GaN power

transistors. These GaN FETs have been

characterized for destructive Single Event Effects

(SEE) and tested for Total Ionizing Dose (TID)

radiation. Applications for these devices include

commercial aerospace, medical, and nuclear power

generation.

GaN’s exceptionally high electron mobility and low

temperature coefficient allows for very low rDS(ON),

while its lateral device structure and majority carrier

diode provide exceptionally low QG and near zero

QRR. The end result is a device that can operate at a

higher switching frequency with more efficiency while

reducing the overall solution size.

By combining the exceptional performance of the

GaN FET in a hermetically sealed Surface Mount

Device (SMD) package with manufacturing in a

MIL-PRF-38535 like flow results in best-in-class

power transistors that are ideally suited for high

reliability applications.

Applications

▪ Switching regulation

▪ Motor drives

▪ Relay drives

▪ Inrush protection

▪ Down hole drilling

▪ High reliability industrial

Features

▪ Very low rDS(ON) 45mΩ (typical)

▪ Ultra low total gate charge 2.5nC (typical)

▪ SEE hardness (see SEE report for details)

• SEL/SEB LETTH (VDS = 160V, VGS = 0V):

86MeV•cm2/mg(Si)

▪ ISL70024SEH radiation acceptance (see TID

report)

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ ISL73024SEH radiation acceptance (see TID

report)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

• Package area: 42mm2

▪ Full military-temperature range operation

•TA = -55°C to +125°C

•TJ = -55°C to +150°C

▪ Qualified to Renesas Rad Hard GaN FET

Screening and QCI Flow (R34TB0003EU)

• All screening and QCI is in accordance with

MIL-PRF-38535L Class-V

Figure 1. ISL70024SEH 4 Ld SMD Package

Figure 2. On-State Resistance (+25°C)

0

20

40

60

80

100

120

140

2.5

3.0

3.5

4.0

4.5

5.0

Gate-Source Voltage (V)

ID = 0.8A

ID = 2.4A

ID = 4.0A

ID = 5.6A

ID = 7.2A

ISL70024SEH, ISL73024SEH

200V, 7.5A Enhancement Mode GaN Power Transistor

Аналогичный номер детали - ISL70024SEHL/PROTO

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	ISL70024SEHL/PROTO	512Kb / 13P	200V, 7.5A Enhancement Mode GaN Power Transistor May 5, 2022

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Аналогичное описание - ISL70024SEHL/PROTO

производитель	номер детали	датащи	подробное описание детали
Rohm	RD3T075CN	3Mb / 15P	Nch 200V 7.5A Power MOSFET
Efficient Power Convers...	EPC2100	2Mb / 9P	Enhancement-Mode GaN Power Transistor Half-Bridge
	EPC2102	1Mb / 7P	Enhancement-Mode GaN Power Transistor Half-Bridge
	EPC2105	2Mb / 9P	Enhancement-Mode GaN Power Transistor Half-Bridge
	EPC2106	1Mb / 7P	Enhancement-Mode GaN Power Transistor Half-Bridge
	EPC2111	1Mb / 9P	Enhancement-Mode GaN Power Transistor Half-Bridge
Renesas Technology Corp	ISL70024SEH	512Kb / 13P	200V, 7.5A Enhancement Mode GaN Power Transistor May 5, 2022
Rohm	GNP1070TC-Z	1Mb / 12P	GaN Enhancement Mode Power Transistor 2023.04.18 - Rev.005
	GNP1150TCA-Z	1Mb / 12P	GaN Enhancement Mode Power Transistor 2023.04.18 - Rev.005
	GNE1008TB	1Mb / 6P	GaN Enhancement Mode Power Transistor 26.Jun.2023 Rev.003

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ISL70024SEHL/PROTO датащи(PDF) 1 Page - Renesas Technology Corp

ISL70024SEHL/PROTO датащи(HTML) 1 Page - Renesas Technology Corp

Аналогичный номер детали - ISL70024SEHL/PROTO

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