FN8976 Rev.6.03

Page 6

Mar 28, 2024

ISL70024SEH, ISL73024SEH Datasheet

3.4

Electrical Specifications

Unless otherwise noted, VDS = 160V. Boldface limits apply across the operating temperature range, -55°C to +125°C; over a

total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50-300rad(Si)/s (ISL70024SEH only); or over a total

ionizing dose of 75krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.

Parameter

Symbol

Test Conditions

Min[1]

1. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, and +125°C, unless otherwise specified.

Typ[2]

2. Typical values shown are not guaranteed.

Max[1]

Unit

Static Characteristics

Drain-to-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 125µA

200

--

V

Drain-to-Source Leakage Current

IDSS

VDS = 160V, VGS = 0V

-

1

115

µA

Drain-to-Gate Leakage Current

IGSX

VDS = 160V, VGS = 0V

-

1

115

µA

Gate-to-Source Forward Leakage

IGSS

VGS = 5V

-

0.8

2.5

mA

Gate-to-Source Reverse Leakage

VGS = -4V

-100

-20

-

µA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 1.5mA

0.8

1.4

2.5

V

Drain-to-Source ON-Resistance

rDS(ON)

VGS = 5V, ID = 7A

-

45

110

mΩ

Source-to-Drain Forward Voltage

VSD

IS = 0.5A, VGS = 0V

0.8

1.8

3.5

V

Dynamic Characteristics

Input Capacitance[3]

3. Limits are established by characterization and/or design and are not tested.

CISS

VDS = 100V, VGS = 0V

-270

-pF

Output Capacitance

COSS

VDS = 100V, VGS = 0V, TA = +25°C

-

150

200

pF

Reverse Transfer Capacitance[3]

CRSS

VDS = 100V, VGS = 0V

-

1

-

pF

Gate Resistance[3]

rG

TA = +25°C

-

60

-

mΩ

Total Gate Charge

QG

VDS = 100V, VGS = 5V, ID = 7A, TA = +25°C

-

2.5

5

nC

Gate Charge at Threshold[3]

QG(th)

VDS = 100V, ID = 7A

-

0.4

-

nC

Gate-to-Source Charge

QGS

VDS = 100V, ID = 7A, TA = +25°C

-

0.8

2.0

nC

Gate-to-Drain Charge

QGD

VDS = 100V, ID = 7A, TA = +25°C

-

0.6

2.0

nC

Output Charge[3]

QOSS

VDS = 100V, VGS = 0V

-

23

-

nC