FN8976 Rev.6.03

Page 3

Mar 28, 2024

ISL70024SEH, ISL73024SEH Datasheet

1.

Overview

1.1

Ordering Information

Ordering Part Number[1]

1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with

both SnPb and Pb-free soldering operations.

Radiation Hardness

(Total Ionizing Dose)

Package Description

(RoHS Compliant)

Package

Drawing

Temperature

Range (°C)

ISL70024SEHML

HDR to 100krad(Si)

LDR to 75krad(Si)

4 Ld SMD

J4.A

-55 to +125

ISL73024SEHML

LDR to 75krad(Si)

ISL70024SEHMX[2][3]

2. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of

meeting the electrical performance outlined in <Hyperlink>“Electrical Specifications” on page 6.

3. The die solder bump composition is PbSn (95%/5%) with a melt point of 312°C. Recommended reflow profile includes a ramp-up to a

peak of 350-360°C with a dwell time of 3 minutes at/near the peak before ramp-down in a hydrogen forming gas with 3% hydrogen.

HDR to 100krad(Si)

LDR to 75krad(Si)

Die

-

ISL73024SEHMX[2][3]

LDR to 75krad(Si)

ISL70024SEHX/SAMPLE[2][3][4]

4. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts

are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature

specified in this datasheet. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in this datasheet.

The /SAMPLE parts do not receive 100% screening across temperature to the electrical limits. These part types do not come with a

Certificate of Conformance.

N/A

ISL73024SEHX/SAMPLE[2][3][4]

N/A

ISL70024SEHL/PROTO[4]

N/A

4 Ld SMD

J4.A

ISL73024SEHL/PROTO[4]

N/A

ISL70040SEHEV3Z[5]

5. Evaluation boards use the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect

(SEE) immunity.

Evaluation board with the ISL70040SEH low-side driver and ISL70024SEH 200V GaN

FET

ISL73040SEHEV4Z[5]

Half bridge power stage using the ISL73040SEH, ISL73024SEH, and the ISL71610M

Table 1. Key Differences Between Family of Parts

Part Number

Breakdown Voltage

(V)

Drain Current (A)

rDS(ON) (mΩ)QG (nC)

ISL7x020SEH

40

65

3.5

19

ISL7x023SEH

100

60

5

14

ISL7x024SEH

200

7.5

45

2.5