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ISL70024SEHL/PROTO датащи(PDF) 4 Page - Renesas Technology Corp

номер детали ISL70024SEHL/PROTO
подробное описание детали  200V, 7.5A Enhancement Mode GaN Power Transistor
PDF  14 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70024SEHL/PROTO датащи(HTML) 4 Page - Renesas Technology Corp

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FN8976 Rev.6.03
Page 4
Mar 28, 2024
ISL70024SEH, ISL73024SEH Datasheet
2.
Pin Information
2.1
Pin Assignments
2.2
Pin Descriptions
4 Ld SMD
Pin Number
Pin
Name
Description
1
S
Source connection for the GaN FET.
2SUB
Substrate connection for the GaN FET which is internally shorted in to source. Tie this pin to source
on the PCB.
3
D
Drain connection for the GaN FET.
4G
Gate connection for the GaN FET. Minimize trace inductance from driver to reduce over-stressing the
gate.
NA
Lid
Internally tied to the source pin.
Note: The ESD triangular mark indicates Pin #1. It is a part of the device
marking and is placed on the lid in the quadrant where Pin #1 is located.
Bottom View
(1) S
(4)
(2)
(3) D
Top View
Pin #1 Index Area
(4) G
(2) SUB
(1) S
(3) D
G
SUB



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