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PS200 датащи(PDF) 19 Page - Microchip Technology |
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PS200 датащи(HTML) 19 Page - Microchip Technology |
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19 / 36 page ![]() © 2005 Microchip Technology Inc. DS21891B-page 17 PS200 5.5 DC Characteristics 5.6 DC Characteristics DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C to +85°C Param No. Sym Characteristic Min Typ† Max Units Conditions VIL Input Low Voltage D032 RESET VSS — 0.2 VDD V4.5V ≤ VDD ≤ 5.5V, otherwise entire range VIH Input High Voltage D042 RESET 0.8 VDD —VDD V4.5V ≤ VDD ≤ 5.5V, otherwise entire range IIL Input Leakage Current(2) D060A Analog inputs — ±0.1 ±1 μAVss ≤ VPIN ≤ VDD D061 RESET(1) — ±1 ±5 μAVss ≤ VPIN ≤ VDD Output Low Voltage D080 VOL Pins LED1, LED2, CTRLOUT, CHGOUT, HVOUT —— 0.6 V IOL = 8.5 mA, VDD = 4.5V Output High Voltage D090 VOH Pins LED1, LED2, CTRLOUT, CHGOUT, HVOUT VDD – 0.7 — — V IOH = -3.0 mA, VDD = 4.5V † Data in “Typ” column is at 5.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The leakage current on the RESET pin is strongly dependent on the applied voltage level. The specified levels represent normal operating conditions. Higher leakage current may be measured at different input voltages. 2: Negative current is defined as current sourced by the pin. DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C to +85°C Param No. Sym Characteristic Min Typ† Max Units Conditions Capacitive Loading Specs on Output Pins D101 CIO Pins LED1, LED2, CTRLOUT, CHGOUT, HVOUT —— 50* pF Data EEPROM Memory D120 ED Endurance 1M 10M — E/W 25 °C at 5V D121 VDRW VDD for read/write VMIN —5.5 V VMIN = Minimum operating voltage D122 TDEW Erase/Write cycle time — 5 6 ms * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. |
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