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PS200 датащи(PDF) 18 Page - Microchip Technology |
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PS200 датащи(HTML) 18 Page - Microchip Technology |
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18 / 36 page ![]() PS200 DS21891B-page 16 © 2005 Microchip Technology Inc. 5.3 DC Characteristics 5.4 Shunt Regulator TABLE 5-1: SHUNT REGULATOR SPECIFICATIONS DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C to +85°C Param No. Sym Characteristic Min Typ† Max Units Conditions D001B D001C VDD Supply Voltage 2.0 4.5 — — 5.0 5.0 V V FOSC <= 4 MHz FOSC > 4 MHz D002 VDR RAM Data Retention Voltage(1) 1.5* — — V Device in Sleep mode D003 VPOR VDD Start Voltage to ensure internal Power-on Reset signal —VSS — V See section on Power-on Reset for details D004 SVDD VDD Rise Rate to ensure internal Power-on Reset signal 0.05* — — V/ms See section on Power-on Reset for details D005 VBOR VDD Voltage required to initiate a Brown-out Detect —2.1 — V D010S IDD Supply Current(2) —— — mA VDD and current are constant due to shunt regulator. D020 IPD Power-Down Current(3) —2.9 TBD nA VDD = 5.0V, WDT disabled Legend: TBD = To Be Determined * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data. 2: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD; RESET = VDD. 3: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD and VSS. Shunt Regulator Specifications Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C to +125°C Characteristic Sym Min Typ Max Units Comments Shunt Voltage VSHUNT 4.75 — 5.25 Volts Shunt Current ISHUNT 4— 50 mA Shunt Resistance RSHUNT —— 3 Ω Settling Time* TSETTLE — — 150 ns To 1% of final value Load Capacitance CLOAD 0.01 — 10 μF Bypass capacitor on VDD pin Regulator Operating Current ΔISNT —180 — μA Includes band gap reference current * These parameters are characterized but not tested. Note: The Δ current is the additional current consumed when this peripheral is enabled. This current should be added to the base IDD or IPD measurement. |
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