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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F101X6 датащи(PDF) 42 Page - STMicroelectronics |
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STM32F101X6 датащи(HTML) 42 Page - STMicroelectronics |
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42 / 64 page  Electrical characteristics STM32F101xx 42/64 5.3.12 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 29 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. All unused pins must be held at a fixed voltage, by using the I/O output mode, an external pull-up or pull-down resistor (see Figure 14). Table 29. I/O static characteristics(1) 1. VDD = 3.3 V, TA = −40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage(2) 2. Values based on characterization results, and not tested in production. TTL ports –0.5 0.8 V VIH IO TC input high level voltage(2) 2VDD+0.5 IO FT high level voltage(2) 25.5V VIL Input low level voltage(2) CMOS ports –0.5 0.35 VDD V VIH Input high level voltage(2) 0.65 VDD VDD+0.5 Vhys IO TC Schmitt trigger voltage hysteresis(3) 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 200 mV IO TC Schmitt trigger voltage hysteresis(3) 5% VDD (4) mV Ilkg Input leakage current (4) 4. With a minimum of 100 mV. VSS ≤VIN ≤VDD Standard I/Os ±1 µA VIN = 5 V 5 V tolerant I/Os 3 RPU Weak pull-up equivalent resistor(5) 5. Leakage could be higher than max. if negative current is injected on adjacent pins. VIN = VSS 30 40 50 k Ω RPD Weak pull-down equivalent resistor(6) 6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order) . VIN = VDD 30 40 50 k Ω CIO I/O pin capacitance 5 pF |
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