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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F101X6 датащи(PDF) 63 Page - STMicroelectronics |
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STM32F101X6 датащи(HTML) 63 Page - STMicroelectronics |
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63 / 64 page  STM32F101xx Revision history 63/64 8 Revision history Table 45. Document revision history Date Revision Changes 06-Jun-2007 1 First draft. 20-Jul-07 2 IDD values modified in Table 11: Maximum current consumption in Run and Sleep modes (TA = 85 °C). VBAT range modified in Power supply schemes. VREF+ min value, tSTAB, tlat and fTRIG added to Table 37: ADC characteristics. Table 33: TIMx characteristics modified. Note 5 modified and Note 7, Note 4 and Note 6 added below Table 3: Pin definitions. Figure 11: Low-speed external clock source AC timing diagram, Figure 8: Power supply scheme, Figure 16: Recommended NRST pin protection and Figure 17: I2C bus AC waveforms and measurement circuit modified. Sample size modified and machine model removed in Electrostatic discharge (ESD). Number of parts modified and standard reference updated in Static latch-up. 25 °C and 85 °C conditions removed and class name modified in Table 28: Electrical sensitivities. tSU(LSE) changed to tSU(LSE) in Table 17: HSE 4-16 MHz oscillator characteristics. In Table 24: Flash endurance and data retention, typical endurance added, data retention for TA = 25 °C removed and data retention for TA = 85 °C added. Note removed below Table 7: General operating conditions. VBG changed to VREFINT in Table 10: Embedded internal reference voltage. IDD max values added to Table 11: Maximum current consumption in Run and Sleep modes (TA = 85 °C). IDD(HSI) max value added to Table 19: HSI oscillator characteristics. RPU and RPD min and max values added to Table 29: I/O static characteristics. RPU min and max values added to Table 32: NRST pin characteristics (two notes removed). Datasheet title corrected. USB characteristics section removed. Features on page 1 list optimized. Small text changes. |
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