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STM32F101X6 датащи(PDF) 28 Page - STMicroelectronics |
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STM32F101X6 датащи(HTML) 28 Page - STMicroelectronics |
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28 / 64 page ![]() Electrical characteristics STM32F101xx 28/64 5.3.5 Supply current characteristics The current consumption is measured as described in Figure 9: Current consumption measurement scheme. Maximum current consumption The MCU is placed under the following conditions: ● All I/O pins are in input mode with a static value at VDD or VSS (no load) ● All peripherals are disabled except if it is explicitly mentioned ● The Flash access time is adjusted to fHCLK frequency (0 wait state from 0 to 24 MHz, 1 wait state from 24 to 36 MHz) The parameters given in Table 11 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. Table 11. Maximum current consumption in Run and Sleep modes (TA = 85 °C) (1) Symbol Parameter Conditions FHCLK Typ (2) Max(3) Unit IDD Supply current in Run mode External clock with PLL, code running from Flash, all peripherals enabled (see RCC register description): fPCLK1= fHCLK/2, fPCLK2=fHCLK 36 MHz 22 TBD mA 24 MHz 21 TBD External clock, PLL stopped, code running from Flash, all peripherals enabled (see RCC register description): fPCLK1= fHCLK/2, fPCLK2=fHCLK 8 MHz 10 TBD External clock with PLL, code running from RAM, all peripherals enabled (see RCC register description): fPCLK1= fHCLK/2, fPCLK2=fHCLK 36 MHz 13 18 24 MHz 11 15 External clock, PLL stopped, code running from RAM, all peripherals enabled (see RCC register description): fPCLK1= fHCLK/2, fPCLK2=fHCLK 8 MHz 4.5 TBD Supply current in Sleep mode External clock with PLL, code running from RAM or Flash, all peripherals enabled (see RCC register description): fPCLK1= fHCLK/2, fPCLK2=fHCLK 36 MHz 13 22 24 MHz 10 17 External clock, PLL stopped, code running from RAM or Flash, all peripherals enabled (see RCC register description): fPCLK1= fHCLK/2, fPCLK2=fHCLK 8 MHz 3.5 TBD 1. TBD stands for to be determined. 2. Typical values are measured at TA = 25 °C, and VDD = 3.3 V. 3. Data based on characterization results, tested in production at VDmax, fHCLK max. TAmax, and code executed from RAM. |
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