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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDA5345HT датащи(PDF) 37 Page - NXP Semiconductors |
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TDA5345HT датащи(HTML) 37 Page - NXP Semiconductors |
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37 / 44 page  1999 June 10 37 Philips Semiconductors Preliminary specification 5 V spindle & VCM driver combo TDA5345HT 3-4 Spindle Pll Charge Pump (assuming that Resistor @ pin RefCurRes is exactly 33 k Ω) 3-5 back-EMF comparator 4. VCM circuits 4-1 VCM driver SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ich/disch00 charge/discharge current PllCur[1, 0] = “00” 0.212 0.25 0.287 µA Ich/disch01 charge/discharge current PllCur[1, 0] = “01” 0.425 0.5 0.575 µA Ich/disch10 charge/discharge current PllCur[1, 0] = “10” 0.612 0.72 0.828 µA Ich/disch11 charge/discharge current PllCur[1, 0] = “11” 0.808 0.95 1.09 µA SYMCur chargedischarge currents symetry 0.93 1.07 rise/Fall time GbD 1 2 ns SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. Unit VOSen comparator offset start up mode 1 8 15 mV VOSdis comparator offset running mode -5 0 5 mV VCT center tap bias voltage biasCt = ‘1’ or PorN = ‘0’ SpinRect Bemf/2 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT RDSon total FET resistance (I VCM= 400 mA) 1.5 Ω IOS output offset current DAC12 = “00000000000” & RSense = 1 Ω -10 +10 mA IMax+400 maximum positive current high Gain, without offset 384 400 416 mA IMax-400 maximum negative current high Gain, without offset -416 -400 -384 mA IMax+100 maximum positive current low Gain, without offset 92.5 98.5 102.5 mA IMax-100 maximum negative current low Gain, without offset -102.5 -98.5 -92.5 mA Lin transconductance linearity 3 different sections measured -3 +3 % IQUIES quiescent current 2 legs of the H-bridge 3.4 15 mA VVcmVdd5Div2 reference voltage accuracy Ref = Vdd5/2 -3 +3 % GPD power driver gain 4.8 4.95 5.1 V/V DISTO crossover distortion GbD 0 Vfbmax max voltage on Vcm+ or Vcm- positive fly-back, I<100 mA Vdd5+ 0.1 Vdd5+ 0.2 Vdd5+ 0.3 V Vfbmin min voltage on Vcm+/- negative fly-back, I<100 mA -0.3 -0.2 -0.1 V VRetRefSR retract circutry ref voltage slow retract mode 110 125 140 mV VRetRefFP retract circutry ref voltage full power retract mode 220 250 280 mV VRetLim retract voltage limitation full power retract mode 2.45 2.8 3.14 V RRetTot total mos resistance in retract mode spinRectBemf >= 2.5 V GbD 3.5 Ω |
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