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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S71PL129JC0 датащи(PDF) 84 Page - SPANSION |
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S71PL129JC0 датащи(HTML) 84 Page - SPANSION |
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84 / 153 page  82 S71PL129JC0/S71PL129JB0/S71PL129JA0 S71PL129Jxx_00_A8 October 28, 2005 Advance Info rmation DC Characteristics (Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 3 to 4) Capacitance (Ta = 25°C, f = 1 MHz) Note: This parameter is sampled periodically and is not 100% tested. AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 5 to 11) Symbol Parameter Test Condition Min Typ. Max Unit IIL Input Leakage Current VIN = 0 V to VDD -1.0 — +1.0 µA ILO Output Leakage Current Output disable, VOUT = 0 V to VDD -1.0 — +1.0 µA VOH Output High Voltage IOH = - 0.5 mA 2.0 ¾ V V VOL Output Low Voltage IOL = 1.0 mA — — 0.4 V IDDO1 Operating Current CE1#= VIL, CE2 = VIH, IOUT = 0 mA, tRC = min. ET5UZ8A-43DS — — 40 mA ET5VB5A-43DS — — 50 IDDO2 Page Access Operating Current CE1#= VIL, CE2 = VIH, IOUT = 0 mA Page add. cycling, tRC = min. — — 25 mA IDDS Standby Current (MOS) CE1# = VDD - 0.2 V, CE2 = VDD - 0.2 V ET5UZ8A-43DS — — 70 mA ET5VB5A-43DS — — 100 µA IDDSD Deep Power-down Standby Current CE2 = 0.2 V — — 5 µA Symbol Parameter Test Condition Max Unit CIN Input Capacitance VIN = GND 10 pF COUT Output Capacitance VOUT = GND 10 pF Symbol Parameter Min Max Unit tRC Read Cycle Time 70 10000 ns tACC Address Access Time — 70 ns tCO Chip Enable (CE1#) Access Time — 70 ns tOE Output Enable Access Time — 25 ns tBA Data Byte Control Access Time — 25 ns tCOE Chip Enable Low to Output Active 10 — ns tOEE Output Enable Low to Output Active 0 — ns tBE Data Byte Control Low to Output Active 0 — ns tOD Chip Enable High to Output High-Z — 20 ns tODO Output Enable High to Output High-Z — 20 ns tBD Data Byte Control High to Output High-Z — 20 ns |
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