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S71PL129JC0 датащи(PDF) 60 Page - SPANSION

номер детали S71PL129JC0
подробное описание детали  Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
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S71PL129JC0/S71PL129JB0/S71PL129JA0
S71PL129Jxx_00_A8 October 28, 2005
Advance
Info rmation
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#
is an open-drain output, several RY/BY# pins can be tied together in parallel with
a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is in the read mode, the standby mode, or one of the banks is in the
erase-suspend-read mode.
Table 14 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm
is in progress or complete, or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is valid after the rising edge
of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is
any sector address within the sector being erased. During chip erase, a valid address is
any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously
with DQ5.
Figure 6. Data# Polling Algorithm
DQ7 = Data?
Yes
No
No
DQ5 = 1?
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START



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