33889 datasheet(20/60 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33889

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Loop time Tx to Rx, no bus failure, MC33889D only ((27),

Figure 5) (ISO ICT test series 10)

Tx high to low transition (dominant edge)

Tx low to high transition (recessive edge)

tLOOPRD

1.15

1.45

1.5

µs

Loop time Tx to Rx, with bus failure, MC33889D only ((27),

Figure 6) (ISO ICT test series 10)

Tx high to low transition (dominant edge)

Tx low to high transition (recessive edge)

tLOOPRD-F

1.9

µs

Loop time Tx to Rx, with bus failure and +-1.5V gnd shift, 5

nodes network, MC33889D,((28), Figure 7, ISO ICT tests

series 11)

tLOOPRD/DR-F+GS

3.6

µs

Min. Dominant Time For Wake-up On CANL or CANH

(Term Vbat; VSUP = 12V) Guaranteed by design.

MC33889B

MC33889D

tWAKE

8.0

µs

Failure 3 Detection Time (Normal Mode)

tDF3

µs

Failure 3 Recovery Time (Normal Mode)

tDR3

160

µs

Failure 6 Detection Time (Normal Mode)

tDF6

200

500

µs

Failure 6 Recovery Time (Normal Mode)

tDR6

150

200

1000

µs

Failure 4, 7 Detection Time (Normal Mode)

tDF47

0.75

1.5

4.0

Failure 4, 7 Recovery Time (Normal Mode)

tDR47

µs

Failure 3a, 8 Detection Time (Normal Mode)

tDF8

0.75

1.7

4.0

Failure 3a, 8 Recovery Time (Normal Mode)

tTDR8

0.75

1.5

4.0

Failure 4, 7 Detection Time, (Term VBAT; VSUP = 12 V)

tDR47

0.8

1.2

8.0

Failure 4, 7 Recovery Time (Term VBAT; VSUP = 12 V)

tDR47

1.92

Failure 3 Detection Time (Term VBAT; VSUP = 12 V)

tDR3

3.84

Failure 3 Recovery Time (Term VBAT; VSUP = 12 V)

tDR3

1.92

Failure 3a, 8Detection Time (Term VBAT; VSUP = 12 V)

tDR8

2.3

Failure 3a, 8 Recovery Time (Term VBAT; VSUP = 12 V)

tDR8

1.2

Notes

27.

AC characteristic according to ISO11898-3, tested per figure 5 and 6. Guaranteed by design, room temperature only.

28.

AC characteristic according to ISO11898-3, tested per figure 7. Max reported is the typical measurement under the worst condition

(gnd shift, dominant/recessive edge, at source or destination node. ref to ISO test specification). Guaranteed by design, room

temperature only.

Table 5. Dynamic Electrical Characteristics (continued)

VSUP From 5.5 V to 18 V, V2INT from 4.75 to 5.25 V and TJ from -40°C to 150°C unless otherwise noted. Typical values

noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Conditions

Symbol

Min

Typ

Max

Unit

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