M700000002 datasheet(123/128 Pages) SPANSION

123 / 128 page

November 25, 2003

Am70PDL127BDH/Am70PDL129BDH

121

AD VAN C E

INFORM ATION

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC. Programming specifications assume that

all bits are programmed to 00h.

2. Maximum values are measured at V

CC = 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000

program/erase cycles.

3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.

4. For 1-16 words programmed in a single write buffer programming operation.

5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.

6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 12 and

11 for further information on command definitions.

8. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Note: Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.5

sec

Chip Erase Time

128

sec

Single Word Program Time (Note 3)

Word

100

TBD

µs

Accelerated Single Word Program Time

(Note 3)

Word

TBD

µs

Total Write Buffer Program Time (Note 4)

352

TBD

µs

Effective Write Buffer Program Time (Note 3) Per Word

TBD

µs

Total Accelerated Effective Write Buffer

Program Time (Note 4)

282

TBD

µs

Effective Accelerated Write Buffer PRogram

Time (Note 4)

Word

17.6

TBD

µs

Chip Program Time

TBD

sec

Description

Min

Max

Input voltage with respect to VSS on all pins except I/O pins

(including OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

CC + 1.0 V

CC Current

–100 mA

+100 mA

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