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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M700000002 датащи(PDF) 114 Page - SPANSION |
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M700000002 датащи(HTML) 114 Page - SPANSION |
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114 / 128 page  112 Am70PDL127BDH/Am70PDL129BDH November 25, 2003 AD VAN C E INFORM ATION AC CHARACTERISTICS Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ V CC. Parameter All Speed Options JEDEC Std. Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 110 ns t AVWL t AS Address Setup Time Min 0 ns t ASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns t DVWH t DS Data Setup Time Min 45 ns t WHDX t DH Data Hold Time Min 0 ns t OEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t ELWL t CS CE# Setup Time Min 0 ns t WHEH t CH CE# Hold Time Min 0 ns t WLWH t WP Write Pulse Width Min 35 ns t WHDL t WPH Write Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 11 µs Per Word Typ 22 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 8.8 µs Per Word Typ 17.6 µs Single Word/Byte Program Operation (Note 2, 5) Byte Typ 100 µs Word 100 Single Word/Byte Accelerated Programming Operation (Note 2, 5) Byte Typ 90 Word 90 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t VHH V HH Rise and Fall Time (Note 1) Min 250 ns t VCS V CC Setup Time (Note 1) Min 50 µs t BUSY WE# High to RY/BY# Low Min 110 ns |
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