1997 Mar 03

3

Philips Semiconductors

Product specification

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

40

V

collector-emitter voltage

LBE2003S

35

V

LBE2009S; LCE2009S

35

V

collector-emitter voltage

open base

−

16

V

emitter-base voltage

open collector

−

3V

collector current (DC)

LBE2003S

−

90

mA

LBE2009S; LCE2009S

−

250

mA

total power dissipation

LBE2003S

−

1.4

W

LBE2009S; LCE2009S

−

3.5

W

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

soldering temperature

at 0.3 mm from case; t = 10 s

−

235

°C

(1) Region of permissible DC operation.

(3) Second breakdown limit (independent of temperature).

Fig.3 DC SOAR; LBE2003S.

handbook, halfpage

10

IC

(mA)

1

(1)

(2)

(3)

MGD996

10

VCE (V)

15

20

30

40

60

100

Fig.4

Power dissipation derating as a function of

mounting-base temperature; LBE2003S.

handbook, halfpage

−50

0

200

2

1.5

0.5

0

1

50

100

150

MGD989

Tmb (

Ptot

(W)

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15