1997 Mar 03

13

Philips Semiconductors

Product specification

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

UNIT

A

max.

D1

W

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

mm

4.0

8-32

UNC

α

90

°

SOT442A

97-02-28

b

L

detail X

D

b

3.2

b1

0.75

c

0.125

M1

1.6

1.4

M

3.27

3.01

1.6

N2

N3

min

2.9

8.5

7.5

Q

2.80

2.50

D2

6

L

min.

N1

max.

12.5

N

max.

0

5

10 mm

scale

5.25

5.10

3.38

3.08

5.28

5.12

M

W

Q

A

N2

N

N1

N3

D1

seating plane

M1

D2

D

c

X

1

4

3

2

Studded ceramic package; 4 leads

SOT442A

L

b1

DIMENSIONS (mm are the original dimensions)

Note

1. This device corporates naked beryllium oxide, the dust of witch is toxic.

α