1997 Mar 03

2

Philips Semiconductors

Product specification

NPN microwave power transistors

LBE2003S;

LBE2009S; LCE2009S

FEATURES

• Diffused emitter ballasting resistors

• Self-aligned process entirely ion implanted and gold

metallization

• Optimum temperature profile

• Excellent performance and reliability.

APPLICATIONS

• Common emitter class-A linear power amplifiers up

to 4 GHz.

DESCRIPTION

The LBE2003S and LBE2009S are NPN silicon planar

epitaxial microwave power transistors in a SOT441A metal

ceramic studless package.The LCE2009S is a

maintenance type in a SOT442A metal ceramic capstan

package.

PINNING

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

Fig.1 Simplified outline and symbol (SOT441A).

Marking code: LBE2003S = 407; LBE2009S = 409.

handbook, halfpage

e

c

b

MAM329

Top view

1

4

3

2

Fig.2 Simplified outline and symbol (SOT442A).

Marking code: LCE2009S = 408.

handbook, halfpage

e

c

b

MAM330

Top view

1

4

3

2

QUICK REFERENCE DATA

TYPE NUMBER

MODE OF

OPERATION

f

(GHz)

(V)

(mA)

(mW)

(dB)

(

Ω)

(

Ω)

LBE2003S

Class-A (CW) linear

2

18

30

≥200

≥10

6.2 + j30

17.5 + j7

LBE2009S

Class-A (CW) linear

2

18

110

≥700

≥9

7.5 + j15

17.5 + j39

LCE2009S

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15