1997 Mar 03

8

Philips Semiconductors

Product specification

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

APPLICATION INFORMATION

Notes

1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.

3. Load power for 1 dB compressed power gain.

MODE OF OPERATION

f

(GHz)

(

Ω)

(

Ω)

Class-A (CW)

2

18

30

≥200 (23)

typ. 250 (24)

≥10

typ. 11

6.2 + j30

17.5 + j7

Fig.7 Prematching test circuit board for 2 GHz.

Dimensions in mm.

Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (

handbook, full pagewidth

C

MCD635

input

output

C

10.5

2

3

2.5

2

12.5

621

3

2 2

66.5

12.5

7

10.5

14.5

2

2

0.5

1.2

1

6

3.5

5

5

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15