ATMEGA64-16AI datasheet(21/393 Pages) ATMEL

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ATmega64(L)

2490L–AVR–10/06

Data Memory Access Times

This section describes the general access timing concepts for internal memory access.

The internal data SRAM access is performed in two clk

CPU cycles as described in Figure

10.

Figure 10. On-chip Data SRAM Access Cycles

EEPROM Data Memory

The ATmega64 contains 2K bytes of data EEPROM memory. It is organized as a sepa-

rate data space, in which single bytes can be read and written. The EEPROM has an

endurance of at least 100,000 write/erase cycles. The access between the EEPROM

and the CPU is described in the following, specifying the EEPROM Address Registers,

the EEPROM Data Register, and the EEPROM Control Register.

“Memory Programming” on page 291 contains a detailed description on EEPROM pro-

gramming in SPI, JTAG, or Parallel Programming mode.

EEPROM Read/Write Access

The EEPROM Access Registers are accessible in the I/O space.

The write access time for the EEPROM is given in Table 2 on page 24. A self-timing

function, however, lets the user software detect when the next byte can be written. If the

user code contains instructions that write the EEPROM, some precautions must be

taken. In heavily filtered power supplies, V

CC is likely to rise or fall slowly on Power-

up/down. This causes the device for some period of time to run at a voltage lower than

specified as minimum for the clock frequency used. See “Preventing EEPROM Corrup-

tion” on page 26. for details on how to avoid problems in these situations.

In order to prevent unintentional EEPROM writes, a specific write procedure must be fol-

lowed. Refer to the description of the EEPROM Control Register for details on this.

When the EEPROM is read, the CPU is halted for four clock cycles before the next

instruction is executed. When the EEPROM is written, the CPU is halted for two clock

cycles before the next instruction is executed.

clk

Data

Address

Address Valid

Compute Address

CPU

Memory Access Instruction

Next Instruction

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