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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BUT11 датащи(PDF) 4 Page - NXP Semiconductors |
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BUT11 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  1997 Aug 13 3 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Measured with a half-sinewave voltage (curve tracer). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUT11 400 −− V BUT11A 450 −− V VCEsat collector-emitter saturation voltage BUT11 IC = 3 A; IB = 600 mA; see Figs 7 and 9 −− 1.5 V BUT11A IC = 2.5 A; IB = 500 mA; see Figs 7 and 9 −− 1.5 V VBEsat base-emitter saturation voltage BUT11 IC = 3 A; IB = 0.6 A; see Fig.7 −− 1.3 V BUT11A IC = 2.5 A; IB = 0.5 A; see Fig.7 −− 1.3 V ICES collector-emitter cut-off current VCE =VCESMmax; VBE = 0; note 1 −− 1mA VCE =VCESMmax; VBE = 0; Tj = 125 °C; note 1 −− 2mA IEBO emitter-base cut-off current VEB =9V; IC =0 −− 10 mA hFE DC current gain VCE =5V; IC = 5 mA; see Fig.10 10 18 35 VCE =5V; IC = 500 mA; see Fig.10 10 20 35 Switching times resistive load (see Fig.12) ton turn-on time BUT11 ICon = 3 A; IBon = −IBoff = 600 mA −− 1 µs BUT11A ICon = 2.5 A; IBon = −IBoff = 500 mA −− 1 µs ts storage time BUT11 ICon = 3 A; IBon = −IBoff = 600 mA −− 4 µs BUT11A ICon = 2.5 A; IBon = −IBoff = 500 mA −− 4 µs tf fall time BUT11 ICon = 3 A; IBon = −IBoff = 600 mA −− 0.8 µs BUT11A ICon = 2.5 A; IBon = −IBoff = 500 mA −− 0.8 µs Switching times inductive load (see Fig.14) ts storage time BUT11 ICon = 3 A; IBon = 600 mA − 1.1 1.4 µs ICon = 3 A; IBon = 600 mA; Tj = 100 °C − 1.2 1.5 µs BUT11A ICon = 2.5 A; IBon = 500 mA − 1.1 1.4 µs ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C − 1.2 1.5 µs tf fall time BUT11 ICon = 3 A; IBon = 600 mA − 80 150 ns ICon = 3 A; IBon = 600 mA; Tj = 100 °C − 140 300 ns BUT11A ICon = 2.5 A; IBon = 500 mA − 80 150 ns ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C − 140 300 ns |
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