1997 Aug 13

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT11; BUT11A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

BUT11

−

850

V

BUT11A

−

1000

V

collector-emitter voltage

open base

BUT11

−

400

V

BUT11A

−

450

V

collector current (DC)

see Figs 2 and 4

−

5A

collector current (peak value)

−

10

A

base current (DC)

−

2A

base current (peak value)

−

4A

total power dissipation

−

100

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Fig.2 Reverse bias SOAR.

handbook, halfpage

0

400

IC

(A)

1200

VCE (V)

0

MGB895

800

(2)

1

2

3

4

5

(1)

(1) BUT11.

(2) BUT11A.

Fig.3 Power derating curve.

handbook, halfpage

050

Tmb (

100

150

120

0

40

80

MGD283

Ptot max

(%)