1997 Aug 13

6

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT11; BUT11A

Fig.8 Base-emitter voltage as a function of base current.

handbook, full pagewidth

1.5

IB (A)

1.6

1.4

0.8

0

VBE

(V)

0.25

1.25

MGB910

1.2

1.0

1.0

0.5

0.75

(1)

(2)

(3)

Fig.9

Collector-emitter saturation voltage as a

function of base current.

handbook, halfpage

1

10

1

VCEsat

(V)

IB (A)

10

MGB873

(1)

(2)

(3)

Fig.10 DC current gain; typical values.

handbook, halfpage

MBC095

IC (A)

110

10

2

10

hFE

1

1V

VCE = 5 V