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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BUT11 датащи(PDF) 8 Page - NXP Semiconductors |
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BUT11 датащи(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page  1997 Aug 13 7 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A Fig.11 Test circuit resistive load. VCC = 250 V; tp =20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. handbook, halfpage MGE244 VCC D.U.T. RL RB VIM tp T 0 Fig.12 Switching time waveforms with resistive load. handbook, halfpage MBB731 t 90% 10% 90% 10% IC IB IB on IB off IC on tr ≤30 ns ts tf ton t Fig.13 Test circuit inductive load. VCC = 300 V; VEB = 5 V; LB =1 µH. handbook, halfpage MBH383 +IB VEB LB LC VCC D.U.T. Fig.14 Switching time waveforms with inductive load. handbook, halfpage MGE238 tr 90% 10% IB IB on −IB off IC on 90% 10% IC t t ts toff tf |
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