1997 Mar 13

3

Philips Semiconductors

Product specification

N-channel enhancement mode vertical

D-MOS transistor

BSP030

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

2. Pulse width and duty cycle limited by maximum junction temperature.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

30

V

gate-source voltage (DC)

−±20

V

drain current (DC)

−

10

A

peak drain current

note 2

−

40

A

total power dissipation

−

5W

−

3.3

W

−

1.25

W

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source current (DC)

−

5A

peak pulsed source current

note 2

−

20

A

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering point

10

K/W