BSP030 datasheet(5/12 Pages) PHILIPS

5 / 12 page

1997 Mar 13

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP030

CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10 µA30

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID =1mA

−

2.8

IDSS

drain-source leakage current

VGS = 0; VDS =24V

−−

500

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−

±100

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID = 2.5 A

−−

0.05

Ω

VGS = 10 V; ID =5A

−−

0.03

Ω

Ciss

input capacitance

VGS = 0; VDS =24V; f=1MHz

−

750

−

Coss

output capacitance

VGS = 0; VDS =24V; f=1MHz

−

450

−

Crss

reverse transfer capacitance

VGS = 0; VDS =24V; f=1MHz

−

200

−

total gate charge

VGS = 10 V; VDD = 15 V; ID =5A;

Tamb =25 °C

−

Qgs

gate-source charge

VGS = 10 V; VDD = 15 V; ID =5A;

Tamb =25 °C

−

2.5

−

Qgd

gate-drain charge

VGS = 10 V; VDD = 15 V; ID =5A;

Tamb =25 °C

−

10.5

−

td(on)

turn-on delay time

VGS = 0 to 10 V; VDD =15V;

ID = 1 A; RL =15 Ω; Rgen =6 Ω

−

fall time

VGS = 0 to 10 V; VDD =15V;

ID = 1 A; RL =15 Ω; Rgen =6 Ω

−

ton

turn-on switching time

VGS = 0 to 10 V; VDD =15V;

ID = 1 A; RL =15 Ω; Rgen =6 Ω

−

td(off)

turn-off delay time

VGS =10to0V; VDD =15V;

ID = 1 A; RL =15 Ω; Rgen =6 Ω

−

rise time

VGS =10to0V; VDD =15V;

ID = 1 A; RL =15 Ω; Rgen =6 Ω

−

toff

turn-off switching time

VGS =10to0V; VDD =15V;

ID = 1 A; RL =15 Ω; Rgen =6 Ω

−

150

Source-drain diode

VSD

source-drain diode forward voltage

VGD = 0; IS = 1.25 A

−−

trr

reverse recovery time

IS = 1.25 A; di/dt = −100 A/µs

−

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