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BSP030 датащи(PDF) 7 Page - NXP Semiconductors

номер детали BSP030
подробное описание детали  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP030 датащи(HTML) 7 Page - NXP Semiconductors

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1997 Mar 13
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
Fig.6
Capacitance as a function of drain-source
voltage; typical values.
VGS = 0; f = 1 MHz; Tj =25 °C.
(1) Ciss.
(2) Coss.
(3) Crss.
handbook, halfpage
08
(1)
(2)
(3)
16
VDS (V)
24
2000
C
(pF)
1500
500
0
1000
MGD719
Fig.7 Output characteristics; typical values.
Tamb =25 °C; tp =80 µs; δ =0.
handbook, halfpage
04
ID
(A)
8
VDS (V)
12
50
0
40
4.5 V
4 V
3.5 V
3 V
30
20
10
MGD720
VGS =
10 V
6 V
5 V
Fig.8 Transfer characteristics; typical values.
VDS = 10 V; Tamb =25 °C; tp =80 µs; δ =0.
handbook, halfpage
0
60
40
20
0
2
ID
(A)
48
6
VGS (V)
MGD721
Fig.9
Gate-source voltage and drain-source
voltage as a function of total gate charge;
typical values.
VDD = 12.5 V; ID = 5 A; Tamb =25 °C.
handbook, halfpage
0
12
8
4
0
10
VGS
(V)
VGS
18
12
6
0
VDS
(V)
20
QG (nC)
30
MGD722
VDS



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