BSP030 datasheet(8/12 Pages) PHILIPS

номер детали	BSP030

подробное описание детали	N-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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8 / 12 page

1997 Mar 13

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP030

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

VGD =0.

(1) Tamb = 150 °C; tp =80 µs; δ =0.

(2) Tamb=25 °C; tp =80 µs; δ =0.

(3) Tamb= −65 °C; tp =80 µs; δ =0.

handbook, halfpage

0.4

(A)

0.8

(1)

(2)

(3)

VSD (V)

1.2

MGD723

Fig.11 Drain-source on-state resistance as a

function of gate-source voltage;

typical values.

Tamb =25 °C; tp =80 µs; δ =0.

VDS ≥ ID × RDSon.

handbook, halfpage

2468

VGS (V)

103

102

MGD724

ID =

100 mA

500 mA

1 A

2.5 A

5 A

10 A

25 A

40 A

RDSon

Ω)

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

VGSth at VDS =VGS; ID = 1 mA.

GSth at Tj

GSth at 25 ° C

--------------------------------------

handbook, halfpage

−75

175

1.2

0.7

0.8

0.9

1.0

1.1

−25

125

Tj (°C)

MGD725

Fig.13 Temperature coefficient of drain-source

on-state resistance as a function of junction

temperature; typical values.

(1) RDSon at VGS = 10 V; ID =5A.

(2) RDSon at VGS = 4.5 V; ID = 2.5 A.

DSon at Tj

DSon at 25 ° C

-----------------------------------------

handbook, halfpage

1.6

0.6

0.8

1.0

1.2

1.4

MGD726

−75

175

−25

(1)

(2)

125

Tj (°C)

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