BSH101 datasheet(3/12 Pages) PHILIPS

номер детали	BSH101

подробное описание детали	N-channel enhancement mode MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 12 page

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.

4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

VGS

gate-source voltage (DC)

−

±20

drain current (DC)

Ts =80 °C; note 1

−

0.7

IDM

peak drain current

note 2

−

2.8

Ptot

total power dissipation

Ts =80 °C

−

0.5

Tamb =25 °C; note 3

−

0.75

Tamb =25 °C; note 4

−

0.54

Tstg

storage temperature

−55

+150

°C

operating junction temperature

−55

+150

°C

Source-drain diode

source current (DC)

Ts =80 °C

−

0.5

ISM

peak pulsed source current

note 2

−

Fig.2 Power derating curve.

handbook, halfpage

160

0.6

0.2

0.4

MGM190

120

Ptot

(W)

TS (°C)

Fig.3 SOAR.

δ = 0.01; Ts =80 °C.

(1) RDSon limitation.

handbook, halfpage

MGM191

110

10−3

10−2

10−1

102

10−1

VDS (V)

IDS

(A)

t p

δ =

(1)

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