2000 Jul 19

7

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

Fig.8 Transfer characteristic; typical values.

handbook, halfpage

0

3

2

1

0

15

MGM195

234

VGS (V)

ID

(A)

Fig.9

Capacitance as a function of drain-source

voltage; typical values.

handbook, halfpage

0

160

80

120

40

0

10

50

MGM193

20

30

40

C

(pF)

VDS (V)

Ciss

Coss

Crss

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

handbook, halfpage

0

0.4

1.2

2

0

0.4

1.6

1.2

0.8

MGM197

0.8

VSD (V)

IS

(A)

(3)

(2)

(1)

Fig.11 Drain-source on-state resistance as a

function of gate-source voltage; typical

values.

handbook, halfpage

10

1

10

6

24

0

MGM198

8

(5)

(4)

(3)

(2)

(1)

(6)

RDSon

(

Ω)

VGS (V)