BSH101 datasheet(5/12 Pages) PHILIPS

5 / 12 page

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

CHARACTERISTICS

Tj =25 °C unless otherwise speciÞed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10 µA60

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = 1 mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS =48V

−−

100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−

±100

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 0.35 A

−−

0.81

Ω

VGS = 4.5 V; ID = 0.175 A

−−

0.93

Ω

Ciss

input capacitance

VGS = 0; VDS =48V; f=1MHz

−

72.2

−

Coss

output capacitance

VGS = 0; VDS =48V; f=1MHz

−

11.3

−

Crss

reverse transfer capacitance

VGS = 0; VDS =48V; f=1MHz

−

3.6

−

total gate charge

VGS = 10 V; VDD =30V;

ID = 0.35 A; Tamb =25 °C

−

2130

−

QGS

gate-source charge

VDD =30V; ID = 0.35 A;

Tamb =25 °C

−

150

−

QGD

gate-drain charge

VDD =30V; ID = 0.35 A;

Tamb =25 °C

−

695

−

Switching times

td(on)

turn-on delay time

VGS = 0 to 10 V; VDD =30V;

ID = 0.35 A; Rgen =6 Ω

−

3.5

−

fall time

VGS = 0 to 10 V; VDD =30V;

ID = 0.35 A; Rgen =6 Ω

−

3.5

−

ton

turn-on switching time

VGS = 0 to 10 V; VDD =30V;

ID = 0.35 A; Rgen =6 Ω

−

td(off)

turn-off delay time

VGS =10to0V; VDD =30V;

ID = 0.35 A; Rgen =6 Ω

−

rise time

VGS =10to0V; VDD =30V;

ID = 0.35 A; Rgen =6 Ω

−

4.5

−

toff

turn-off switching time

VGS =10to0V; VDD =30V;

ID = 0.35 A; Rgen =6 Ω

−

13.5

−

Source-drain diode

VSD

source-drain diode forward

voltage

VGD = 0; IS = 0.5 A

−−

trr

reverse recovery time

IS = 0.5 A; di/dt = −10 A/µs

−

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