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BSH101 датащи(PDF) 8 Page - NXP Semiconductors

номер детали BSH101
подробное описание детали  N-channel enhancement mode MOS transistor
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH101 датащи(HTML) 8 Page - NXP Semiconductors

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2000 Jul 19
8
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
VGSth at VDS =VGS; ID = 1 mA.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
−65
185
0
0.4
MGM199
0.8
1.2
−15
35
85
135
Tj (°C)
k
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
(1) RDSon at VGS = 10 V; ID = 350 mA.
(2) RDSon at VGS = 4.5 V; ID = 170 mA.
k
R
DSon at Tj
R
DSon at 25 ° C
-----------------------------------------
=
handbook, halfpage
−65
185
2.0
0
0.4
MGM200
0.8
1.2
1.6
−15
35
85
135
Tj (°C)
k
(2)
(2)
(1)
(1)



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