ICS557-08

2:1 MULTIPLEXER CHIP FOR PCI-EXPRESS GEN1

PCIE MULTIPLEXER

IDT® 2:1 MULTIPLEXER CHIP FOR PCI-EXPRESS GEN1

7

ICS557-08

REV L 112111

Absolute Maximum Ratings

Stresses above the ratings listed below can cause permanent damage to the ICS557-08. These ratings are stress

ratings only. Functional operation of the device at these or any other conditions above those indicated in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for

extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended

operating temperature range.

DC Electrical Characteristics

Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85

° C

1. Single edge is monotonic when transitioning through region.

2. Inputs with pull-ups/-downs are not included.

Item

Rating

Supply Voltage, VDD

7 V

All Inputs and Outputs

-0.5 V to VDD+0.5 V

Ambient Operating Temperature

-40 to +85

° C

Storage Temperature

-65 to +150

° C

Junction Temperature

125

° C

Soldering Temperature

260

° C

ESD Protection (Input)

2000 V min. (HBM)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Units

Supply Voltage

V

3.135

3.465

V

Input High Voltage1

VIH

OE, SEL, PD

2.0

VDD +0.3

V

Input Low Voltage1

VIL

OE, SEL, PD

VSS-0.3

0.8

V

Input Leakage Current2

IIL

0 < Vin < VDD

-5

5

μA

Operating Supply Current

IDD

50

Ω, 2 pF

40

mA

IDDOE

OE =Low

20

mA

IDDPD

No load, PD =Low

400

μA

Input Capacitance

CIN

Input pin capacitance

7

pF

Output Capacitance

COUT

Output pin capacitance

6

pF

Pin Inductance

LPIN

5nH

Output Resistance

ROUT

CLK outputs

3.0

k

Ω

Pull-up Resistor

RPUP

OE, SEL, PD

110

k

Ω