ADF4002

Rev. 0 | Page 5 of 24

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

–0.3 V to +3.6 V

–0.3 V to +0.3 V

–0.3 V to +5.8 V

–0.3 V to +5.8 V

Digital I/O Voltage to GND

–0.3 V to VDD + 0.3 V

Analog I/O Voltage to GND

–0.3 V to VDD + 0.3 V

Operating Temperature Range

Industrial (B Version)

–40°C to +85°C

Storage Temperature Range

–65°C to +125°C

Maximum Junction Temperature

150°C

Lead Temperature, Soldering

Vapor Phase (60 sec)

215°C

Infrared (15 sec)

220°C

Transistor Count

CMOS

6425

Bipolar

303

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <2 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

THERMAL CHARACTERISTICS

Table 4. Thermal Impedance

Package Type

Unit

TSSOP

150.4

°C/W

LFCSP_VQ

122

°C/W

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.