RYZ024A datasheet(14/40 Pages) RENESAS

номер детали	RYZ024A

подробное описание детали	LTE Category M1 Module

PDF	40 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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14 / 40 page

RYZ024A

Datasheet

R19DS0115EU0101 Rev.1.01

Page 14 of 38

Nov.14.22

Symbol

Minimum

Maximum

Unit

VOL

Output LOW voltage

0.36

IRPU

Input pull-up resistor current

µA

RRPU

Input pull-up resistance

kOhm

IRPD

Input pull-down resistor current

µA

RRPD

Input pull-down resistance

kOhm

Input hysteresis

0.18

IPAD

Input

leakage

current,

non-

tolerant

-1

µA

IOZ

Off-State leakage current

µA

Table 20.

DC Characteristics for Digital IOs, PMU_5V Power Group

Symbol

Minimum

Maximum

Unit

VIH

Input HIGH level

0.8

VBAT + 0.6

(max 5.5)

VIL

Input LOW level

0.2

RF Performance

Important:

For proper operation, the VSWR at the antenna pad must be better than 2:1 in conducted

mode and 3:1 in radiated mode. A higher value could result either in poor RF performance,

reduced Tx power or increased sideband/harmonic emission levels. Very high VSWRs can

permanently damage the power amplifier.

It is recommended to add a DC blocking capacitor in series with the module RF input/ output

pad (#90).

RF Sensitivity

The RYZ024A exhibits the following typical RF sensitivity at 2.5 V.

Table 21.

RF Sensitivity

Band

Typical Sensitivity

Low Bands: B5, B8, B12, B13, B14, B17, B18, B19, B20, B26, B28, B71,

B85

-105 dBm

High bands: B1, B2, B3, B4, B25, B66

-106 dBm

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