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ADF4252BCP датащи(PDF) 4 Page - Analog Devices

номер детали ADF4252BCP
подробное описание детали  Dual Fractional-N/Integer-N Frequency Synthesizer
PDF  28 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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ADF4252BCP датащи(HTML) 4 Page - Analog Devices

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REV. B
–4–
ADF4252
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADF4252 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Temperature
Package
Mode
Range
Option
*
ADF4252BCP
–40ºC to +85ºC
CP-24
ADF4252BCP-REEL
–40ºC to +85ºC
CP-24
ADF4252BCP-REEL7
–40ºC to +85ºC
CP-24
EVAL–ADF4252EB1
EVAL–ADF4252EB2
*CP = Chip Scale Package
PIN CONFIGURATION
PIN 1
INDICATOR
TOP VIEW
(Not to Scale)
18 CPGND2
17 DVDD
16 IFINA
15 IFINB
CPRF 1
CPGND1 2
RFINA 3
14 AGND2
13 RSET
RFINB 4
AGND1 5
MUXOUT 6
ADF4252
ABSOLUTE MAXIMUM RATINGS
1, 2
(TA = 25
°C, unless otherwise noted.)
VDD1, VDD2, VDD3, DVDD to GND
3
. . . . . . . . –0.3 V to +4 V
REFIN, RFINA, RFINB to GND . . . . . . –0.3 V to VDD + 0.3 V
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . . –3.3 V to +3.5 V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 150
°C
CSP JA Thermal Impedance . . . . . . . . . . . . . . . . . . . 122
°C/W
Soldering Reflow Temperature
Vapor Phase (60 sec max) . . . . . . . . . . . . . . . . . . . . . 240
°C
IR Reflow (20 sec max) . . . . . . . . . . . . . . . . . . . . . . . 240
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2This device is a high performance RF integrated circuit with an ESD rating
of <2 k
Ω, and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3GND = CP
GND1, AGND1, DGND, AGND2, and CPGND2.



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