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STM32H753II датащи(PDF) 181 Page - STMicroelectronics |
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STM32H753II датащи(HTML) 181 Page - STMicroelectronics |
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181 / 361 page ![]() DS12117 Rev 8 181/360 STM32H753xI Electrical characteristics (rev Y) 318 en Voltage noise density at 1 KHz output loaded with 4 kΩ -140 - nV/√ Hz at 10 KHz -55 - IDDA(OPAMP) OPAMP consumption from VDDA Normal mode no Load, quiescent mode, follower - 570 1000 µA High- speed mode - 610 1200 1. Guaranteed by design, unless otherwise specified. 2. RLOAD is the resistive load connected to VSSA or to VDDA. 3. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1. Table 98. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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